Ultra Long-term Measurement Results of BTI-induced Aging Degradation on 7-nm Ring Oscillators

We measured ultra-long term BTI-induced degradation of 7-nm ring oscillators (ROs) using a measurement system controlled by an FPGA and a microcontroller unit. The ambient temperature and the supply voltage were set to 125°C and the nominal voltage of 0.75 V. The measurement results showed that even over a very long period around 5 months (le7 s), the RO oscillation frequency continuously degraded with
$t^{n}$
, We propose a degradation model in which BTI -induced traps are increasing as time. The model can successfully replicate the continuous ever-lasting-like degradation.