Investigation of Hot Carrier Enhanced Body Bias Effect in Advanced FinFET Technology

In this paper, we observed non-negligible body bias effect after hot carrier degeneration (HCD) in 7 and 5nm FinFET technologies, even though they have negligible body bias dependence before HCD. We revealed that the trap-induced partial shift of the channel current towards the bottom of fin is the culprit for the enhanced body-biased effect, by combining TCAD and experimental results. We also studied mobility modulation by body bias effect before and after degradation. The results are beneficial for the reliability-aware circuit design against HCD particularly for FinFET-based circuits.