Solution-Processed LiNbO3 Thin Film as a Gate Dielectric of a Ferroelectric Thin Film Transistor

An ideal ferroelectric gate dielectric based thin film transistor (FeTFT) can offer a memory device of random access, high speed, low power, high density and nonvolatility. Lithium niobate (LiNbO
3
) being a well-known ferroelectric material, but its implementation in FeTFT has not been explored much. This work is reporting a methodology of LiNbO
3
based FeTFT device fabrication by solution processed technique. The carrier mobility of 9.6 cm
²
V
^-1
s
^-1
and current ON/OFF ratio of 1.9x10
³
are attained with this LiNbO
3
ferroelectric gate dielectric based FeTFT device. This work also demonstrates a reasonably good memory retention time of a ferroelectric thin film transistor.