Effect of HF Surface Treatment on Electrical Properties of β - Ga2O3 Schottky Barrier Diodes

β - Ga2O3 Schottky barrier diodes were fabricated on Sn-doped n - Ga2O3 (201) substrates to quantify the effect of HF solution treatment on their electrical properties. A 0.2 eV increase in Schottky barrier height resulting in ~ 40 V enhancement in reverse breakdown voltage has been demonstrated for the devices fabricated on a substrate treated with HF solution as compared to diodes on an un-treated surface. The increase in breakdown voltage does not compromise the on-resistance of the diodes. The devices showed excellent current-voltage characteristics with near unity ideality factors and high on-off current ratio.