Process Modeling as a Powerful Semiconductor Industry Tool: PVD of W as Case Study

This work demonstrates the power of process modeling in semiconductor industry by building a kinetic Monte Carlo (kMC) method-based process model for physical-vapour- deposition (PVD) of Tungsten (W) material inside trench structure. The material properties-based simulation knobs (diffusivity, sticking coefficient, sputtering/yield coefficient and energy) were scanned to calibrate process model to experimental data. Based on the calibrated process model, a GUI based platform was developed, which will help process engineers to simulate deposition profiles and subsequently, optimize their recipes to get desired etch/deposition profiles with reduced time, cost and effort.