A Novel Data Recovery Technique for 3D TLC NAND Flash Memory Using Intercell Program

This paper proposes a novel data recovery technique based on an intercell program (IP) method to rescue the retention-failed data. When the error correction code (ECC) is unable to correct the read data owing to the retention loss by the lateral charge migration and vertical charge escape, the data recovery technique directly correct most of the errors in order that the remaining errors could be correctable by ECC. Neighboring wordlines are utilized to implement the IP operation to compensate for the retention loss. In addition, the neighboring wordlines can be used again after a partial erase operation. The proposed IP technique surpasses the word-line interference (WI) technique in various ways, such as data recovery capability, retention, and the erasable neighboring wordline.