Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations

This work explores the lifetime model and failure modes of the 4H-SiC MOS interface in the depletion mode. Unlike accumulation mode TDDB, shorter lifetime and a strong defect dependence are observed in the depletion mode. The 1/E model is found to be a good fit for the observed TDDB lifetime data. Despite having a shorter lifetime than accumulation mode, the modeled lifetimes are sufficient for application deployment.