Reliability Modeling of Middle-Of-Line Interconnect Dielectrics in Advanced process nodes

This paper discusses the physics and methodology for estimating the Reliability lifetime of MOL (Middle-Of-Line) dielectrics for advanced process nodes. Both intrinsic and defect reliability aspects of MOL dielectrics are investigated for accurate projection of Reliability lifetime on Intel 4 process technology. Methods to deconvolute the impact of process driven variations on intrinsic Time Dependent Dielectric Breakdown (TDDB) are presented. In addition, a new construct for targeting of the MOL process parameters is also proposed to address challenges with technology scaling and to mitigate risk with pattern fidelity driven variations.