Enhanced comparative performance analysis of Double Gate (DG) MOSFET over Fully Depleted Silicon on Insulator (FD-SOI) MOSFET

In this paper, we investigate the impact of varying channel and source/drain (S/D) doping concentrations on the performance characteristics of Fully Depleted-Silicon on Insulator (FD SOI) and Dual gate (DG) MOSFET in order to improve their device design parameters. According to the results, DG MOSFET is more acceptable than FD SOI. The findings indicate that DG MOSFET has a higher I
on
/I
off
ratio of about 110.84%, nearly 93.75% of lower leakage current (I
o
ff), and improved Sub-threshold swing (SS) of almost 97%. Moreover, the Short channel effect (SCE) is reduced in DG MOSFET compared to FD SOI. In our work, channel and source/drain doping have been changed and examined through simulation. Using SILCAVO TCAD software, the outcome of this research has better electrical properties for DG MOSFET.