Enhancement-Mode AlN/GaN Fin-type High Electron Mobility Transistor with Low Knee Voltage

In this paper, enhancement-mode AlN/GaN fin-type Fin-HEMT has been fabricated. Compared with the conventional HEMT, the V
TH
of the Fin-HEMT with W
Fin
of 100 nm shifts from -0.3 V to +0.4 V. Meanwhile, the E-mode HEMT exhibits a G
m.max
of 605 mS/mm. At V
GS
of 1 V, the device shows a low V
K
of 0.9 V and an R
on
of 1.6 Ω•mm. In addition, the E-mode Fin-HEMT exhibits a decent f
T
of 46 GHz and a f
max
of 124 GHz.