A 28GHz 41.7%-PAE 17.9dBm-Psat Power Amplifier Using Negative Body-Bias Technique in 40nm CMOS

To support multi-Gb/s communication, 5G millimeter-wave (mm-wave) systems will employ high peak-to-average power ratio (PAPR) waveforms, which imposes stringent requirements on power amplifiers (PAs) in terms of efficiency, linearity, and power back-off (PBO) efficiency. This paper presents a high power-added efficiency PA with negative body-bias technique, connecting the body of transistors to a negative voltage, which improves the efficiency of PA while guaranteeing its stability. Simulation results indicate that the proposed PA achieves a peak PAE of 41.7%, P1dB of 15.6dBm, and Psat of 17.9dBm at 28GHz with core area of 0.11mm², using a 40nm bulk CMOS technology.