Numerical Simulation of Bulk GaN PIN Diode with Spectral-Element Method

Due to the superior properties of bulk gallium nitride (GaN), GaN is expected to be introduced into the PIN limiter to withstand high power microwave. To describe the performance of GaN PIN diode, a physical model based on the drift-diffusion equations is proposed. The high accuracy spectral-element method is adopted to obtain the discretized form. Numerical simulations demonstrate the accuracy and effectiveness of the proposed method.