An Improved Millimeter Wave MOSFET Model Based on BSIM4

This paper presents a MOSFET model based on BSIM4 model. The improved model takes the coupling between the interconnection lines of the RF multi-finger MOSFET and the ground, substrate coupling effect into account to characterize the parasitic effects of transistors at high frequency. To verify the model, a millimeter wave MOSFET with 8 fingers in 65-nm CMOS LP process is fabricated and measured. The Y-parameters and S-parameters of the model are verified with measurement data from 0.1 to 50 GHz. The minimum value of normalized root-mean-square error (NRMSE) is 1.85% for Y-parameters in the whole investigating frequency range. Compared with conventional BSIM4 model that does not consider the interconnection coupling effect, the model in this work shows better accuracy.