Design and Simulation of A Highly Efficient Continuous Class-F Power Amplifier

This paper presents the design and simulation of a continuous Class-F mode power amplifier (PA) which uses extended design space for wideband and high efficiency operation by reconstructing the voltage/current waveform of the active transistor. For verification, we use commercial gallium nitride high electron mobility transistors (GaN HEMTs) CG2H40010F form Wolfspeed Inc, a 28-V GaN on SiC HEMT in package to design the circuit. The PA is designed using Advanced Design Systems (ADS) from keysight. Simulation results show that the saturated drain efficiency of 57.24% to 73.95% and the saturated output power of 39.5 to 40.7 dBm are achieved within 2.26-2.45 GHz.