Memcapacitive to Memristive Transition in Al/Y2O3/GZO Crossbar Array

Here, we report both memcapacitive and memristive behaviors in a
$\text{Y}_{{2}}\text{O}_{{3}}$
-based crossbar array size of (
$4\times4$
), which is fabricated by utilizing dual ion beam sputtering (DIBS) system. The fabricated crossbar array shows the memcapacitive behavior under the application of lower input voltage, while under the comparatively higher input voltage, it shows memristive behavior in switching response. Moreover, the transition from memcapacitive to memristive behavior is stable and reversible in nature and depends on the amplitude of the applied input voltage. The crossbar array devices show stable switching response in multiple switching cycles, excellent endurance (80 000 cycles) and retention (
$12\times 10^{{3}}$
s) properties, low device-to-device (D2D), and cycle-to-cycle (C2C) variabilities in device switching voltages, i.e.,
${V}_{\text {SET}}$
and
${V}_{\text {RESET}}$
. The synaptic functionalities are demonstrated in terms of potentiation (P) and depression (D) mechanisms and achieve least value of nonlinearity factor, i.e., 0.05 under the lower input voltage (1 V), wherein memcapacitive behavior is dominated.