Optimizing Sb₂S₃ Photovoltaic Performance through Minimization of Bulk and Interface Defects

Sb
2
S
3
, also known as antimony sulphide, is a highly desirable material for the creation of affordable and environmentally friendly solar cells. Its high absorption coefficient, low cost, and low energy consumption make it a valuable material used as an absorber layer in solar cells. Despite its potential to enhance photovoltaic (PV) performance, the device’s performance is still impacted by volume and interface problems. In this study, SCAPS-1D software has been utilized to design a Sb
2
S
3
-based photo voltaic device. The impact of two variables, bulk defect density from 10
¹³
to $10^{19}\mathrm{~cm}^{-3}$ and interface defect density (from 10
¹³
to $10^{19} \mathrm{cm}^{-2}$) between Sb
2
S
3
/SnO
2
, has been analysed through simulations of the device structure ITO ZnO/Zn(O,S):N/SnO
2
Sb
2
S
3
. An increase in bulk and interface defect density resulted in reduction in PV performance of the cell due to current leakage and reduced efficiency. This study emphasizes the importance of minimizing both bulk and interface defect density for high-performing solar cells. The findings offer new perspectives for device development and highlight Sb
2
S
3
’s potential as a valuable material in creating economical and effective thin-film solar cells.