Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric HfxZr1-xO2 FeRAM and FeFET With Improved Leakage Current and Robust Reliability by Modifying Atomic Layer Deposition Temperatures

We fabricated FeRAM and FeFET with a bilayer HfxZr1-xO2 (HZO), which comprises 5-nm-thick antiferroelectric HZO and 5-nm-thick ferroelectric HZO. Higher orthorhombic phase and large grain size were shown in grazing-incidence x-ray diffraction and TEM results, respectively. By using low ALD temperature, the leakage current (
$ < 3\times 10^{-{5}}$
A/cm2 under ±2V), gate control ability, the memory window (>1.5V) andthe endurance (107 cycles) have been improved. These results suggest that a low atomic layer deposition temperature is a promising process for use in non-volatile memory devices.