Suppressed Dynamic Avalanche and Enhanced Turn-off dV/dt Controllability in 3300V Scaled IGBTs

Dynamic performance has been compared systematically among 3300V scaled IGBTs with scaling factor (k) from 1 to 10 by TCAD simulations. Even with much stronger Injection Enhancement (IE) effect, Dynamic Avalanche (DA) in scaled IGBTs is proven to be more suppressed than in
$\mathrm{k}=1$
case, and it's demonstrated that IGBT scaling is able to break through the trade-off between lower on-state voltage drop and better switching controllability.