Avoiding Plasma Damage: MacEtch enabled β-Ga2O3 FinFETs for On-Resistance Reduction and Hysteresis Elimination

Although highly promising, the performance of
$\upbeta$
- Ga2O3 transistors are far from their theoretical potentials. Structural innovations by adopting the FinFET geometry remains a relatively virgin field for this material. Here we report the results and discuss the prospect of
$\upbeta-\text{Ga}_{2}\mathrm{O}_{3}$
FinFETs fabricated by the plasma-free highly anisotropic metal-assisted chemical etching (MacEtch) method. A specific on-resistance
$(\mathrm{R}_{\text{on},\text{sp}})$
of 6.5
$\mathrm{m}\Omega\cdot \text{cm}^{2}$
and a 370 V breakdown voltage are achieved. The MacEtch-formed FinFETs demonstrate near-zero (9.7 mV) hysteresis.