Investigation of Self-Heating Effect in Forksheet FETs for Sub-3-nm Node

Self-heating effect (SHE) in silicon forksheet field-effect transistors (FSFETs) and nanosheet FETs (NSFETs) for sub-3-nm node was analyzed using calibrated TCAD. For SHE investigation, electrical and thermal properties, and reliability were assessed according to channel width
$(W_{CH})$
. A silicon-nitride wall deteriorated the thermal properties of FSFETs; however, FSFETs were electrically superior to NSFETs. Furthermore, as
$W_{CH}$
decreases, FSFETs exhibited lower lattice temperature and more improved reliability than NSFETs. Therefore, these quantitative comparisons revealed FSFETs surpassed NSFETs in terms of SHE.