MoS2 - based 3D stackable charge-trap memory with AlN interface layer for reducing optical phonon scattering

2D materials are one of the promising alternatives to Si channel for future electronic devices due to their unique characteristics. Herein, we have demonstrated a MoS
2
-based memory device with Al
2
O
3
/HfO
2
/ AlN (A/H/N) as a gate dielectric. We revealed that HfO
2
leads to facilitating memory operation and AlN gives rise to a great electrical performance. With the help of low process temperature, the proposed device can be a milestone in future 3D stackable electronics.