High-Endurance (>1011cycles) and Thermally-Stable Sub-100nm TiO2 Channel FeFET for Low-Power Memory Centric 3D-LSI Applications

We present high-performance and highly-reliable HfO
2
-based ferroelectric FETs (FeFETs) using thermally-stable TiO
2
channels. Our device with the channel length
$< 100\text{nm}$
showed high-speed and low-voltage program/erase
$(100\mathrm{n}\sec/\pm 3\mathrm{V})$
. We also confirmed whole-channel switching, which overcomes the difficulty in erase operation of n-type oxide semiconductor channel FeFETs. Furthermore, excellent endurance over
$10^{11}$
cycles is demonstrated, making TiO
2
-FeFET promising candidate for future low-power memory centric 3D-LSI applications.