Controllable Conductive Filament Formation in Resistive-RAM Using ZnO Nanoparticles and Its Mechanisms

In this study, ZnO nanoparticles (NPs) are suggested to improve the uniformity in ReRAM by reducing the formation energy of oxygen vacancy. Electrical measurement and density functional theory calculation (DFT) are performed to confirm the role of ZnO NPs. I-V measurement shows the improvement of both uniformity and endurance in ZnO NPs ReRAM.