A Study on the Thermal Budget of Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors for Next-Generation Memory Applications

In this study, the thermal budget of atomic layer deposited Hf
0.5
Zr
0.5
O
2
(HZO) thin films have been investigated for memory applications. Specifically, using a furnace as a crystallization method of the HZO thin film, TiN/HZO/TiN capacitors were fabricated under various annealing temperature (300-500°C) and time (1–48 h) conditions. As a result, although the annealing time needs to be increased, the ferroelectric properties with robust endurance were realized by lowering the annealing temperature.