Forward Body Bias Technique in DRAM Peripheral Transistor at Cryogenic Temperature for Quantum Computing Applications

For the first time, the body effect in a dynamic random-access memory (DRAM) peripheral transistor is investigated at cryogenic temperatures. The experimental results confirm that the forward body bias (FBB) reduces hot-carrier degradation (HCD). Furthermore, an FBB to boost the performance was tested by considering the leakage currents of the transistors. These results will aid in understanding FBB operation in planar bulk MOSFETs at cryogenic temperatures.