Crossbar Arrays based on “Wall” Phase-Change Memory (PCM) and Ovonic- Threshold Switching (OTS) Selector: a Device Integration Challenge Towards New Computing Paradigms in Embedded Applications

In this work, we demonstrate the integration feasibility of Crossbar arrays based on Ovonic- Threshold Switching (OTS) selector and “Wall” -based Phase-Change Memory, realized with a “Double-Patterned Self-Aligned” (DPSA) structure in the Back-End-of-Line (BEOL) of the CMOS fabrication. We fabricated devices with critical dimensions down to
$60\ \text{nm}\times 80\ \text{nm}$
, integrating materials providing improved thermal stability (against BEOL thermal budget). Preliminary statistical electrical tests performed in 1 kb 1T1S1R arrays confirm the devices correct programming and cycling operations. These results pave the way to the integration of Crossbar arrays in embedded applications.