Improvement of RTS Noise and Peel Off Issue of BSI CIS Products by Changing FEP Film Stack Raw Material

The improvement of random telegraph signal (RTS) noise is an important research topic, as downscaling of transistors and the increase of the photosensitive are required with maintaining sensitivity in low-light conditions for high-resolution CMOS image sensors. Here, we report an improvement in RTS noise with Al
2
O
3
as field effect passivation (FEP)'s raw material. Furthermore, in order to apply to mass production of wafer-level, we present a method to overcome Al
2
O
3
peel-off issues from Si surface.