Channel-Length-Dependent Low-Frequency Noise Characteristics of Ferroelectric Junctionless Poly-Si Thin-Film Transistors

In this study, we explore the low-frequency noise (LFN) characteristics of hafnium-zirconium ferroelectric junctionless poly-Si thin-film transistors (FE JL TFTs) with different channel lengths (
${L}\text{s}$
). The findings reveal that the magnitude of 1/
${f}$
noise decreases with a decrease in
${L}$
, exhibiting the opposite trend from that of conventional FETs. Additionally, it is observed that the protrusion of poly-Si is more susceptible to damage from tensile stress during post-metal annealing in devices with longer
${L}$
.