Multi-scale electro-thermo-mechanical simulation of a SiC MOSFET transitor during short-circuit

This paper proposes a method based on a bridge between SENTAURUS TCAD and ANSYS Mechanical to determine the mechanical stress on a cell during a short-circuit, depending on its localisation in a die. Our method began by simulating a short circuit with SENTAURUS in order to obtain the heat generation during this phenomenon. A new 1D heat generation profil has been created to better fit the actual heat generation during a short-circuit. This profile is used in a die simulation to estimate the displacement and finally estimate the stress on a cell depending on its localisation in a die.