Enabling Scalable, Ultralow-Voltage Flexible Organic Field-Effect Transistors via Blade-Coated Cross-Linked Thick Polyvinyl Alcohol Gate Dielectric

A scalable ultralow-voltage flexible organic field-effect transistor (OFET) design has been accomplished through utilization of a blade-deposited thick cross-linked polyvinyl alcohol (c-PVA) dielectric. This blade-deposited thick c-PVA dielectric film is capable of suppressing device leakage, enabling high-performing OFETs with benchmark electrical properties of ultr- alow operation voltage (< 1 V), high field-effect mobility close to 10 cm2/
$\text{V}\cdot \text{s}$
, and excellent subthreshold swing < 100 mV/decade. In addition, the OFETs with blade-deposited c-PVA gate dielectric have exhibited excellent mechanical stress stability, with only minimum performance degradation after 2 h of static bending or
$10^{{3}}$
cycles of bending. These results will enable realization of a simple low-cost manufacturing process for high-performance, low-voltage flexible OFETs for a great variety of organic electronics.