Study on HfC Film Attenuating Materials for Terahertz Devices

Terahertz devices have an urgent need for thin-film attenuation materials. In this paper, a novel HfC thin film attenuation material was prepared by pulsed laser deposition. The test shows that the thickness of the HfC film prepared by pulsed laser deposition method can be arbitrarily adjusted in the range of
$\boldsymbol{0.39}\sim \boldsymbol{1.07}\mu\mathbf{m}$
, the film is firmly combined with the oxygen-free copper matrix, and there is no shedding after withstanding the impact of high temperature, and the
$\mathbf{S}_{21} < -3\mathbf{dB}$
in the range of 214∼224GBz has good absorption performance and can better meet the requirements of terahertz devices.