Neutron Displacement Damage Cross Section in GaN: Numerical Evaluations and Differences With Si

The displacement damage cross section of the neutron–GaN interaction is calculated in the energy range from millielectronvolts to gigaelectronvolts. Different calculation methods are used and discussed to estimate the modeling uncertainty. The nonionizing energy loss (NIEL) and the relative damage factors are also deduced. Differences with the neutron–silicon interactions are presented, and the impacts on the estimation of total nonionizing dose (TNID) levels are evaluated as a function of neutron energy.