Lithium-ion-Based Resistive Devices of LiCoO2/LiPON/Cu With Ultrathin Interlayers of Titanium Oxide for Neuromorphic Computing

Lithium (Li)-ion materials such as LiCoO2 and (Li3PO4)-N (LiPON) are used in Li-ion all-solid-state batteries, and are now expected to be used as ion-electron hybrid materials to create a new degree of freedom in future integrated circuits. We fabricated thin-film devices on the basis of LiCoO2/LiPON/Cu and ultrathin titanium oxide (
${\mathrm {TiO}}_{x}$
) to demonstrate their new type of resistance change mechanism and characteristics. Multi-level resistance changes promising as synaptic plasticity were obtained, and the resistance properties enable neuromorphic computing to enter a new era.