Distributed field plate effects in split-gate trench MOSFETs

Fast electric transients can cause distributed effects inside trench MOSFETs possibly resulting in device failure. A new test structure to study those distributed effects, combined with a new Transmission-Line Pulse (TLP) setup, is presented. On-wafer TLP measurements are performed and combined with TCAD and SPICE simulations to predict the space and time evolution of the field plate potential during transients.