Physics-Based Analytical Formulation of the Soft Error Rate in CMOS Circuits

The exponential dependence of the soft error rate (SER) with critical charge in CMOS circuits, empirically proposed by Hazucha and Svensson, is derived in the framework of the diffusion–collection approach. A full analytical formulation is established, linking the SER with physical and technological parameters, notably the circuit supply voltage, carrier diffusion coefficient, and ion characteristics.