Performance Analysis of Dielectric Modulated Dual Material Double Gate Hetero Stack (DM-DMDG-HS) TFET

This paper presents a detailed sensitivity analysis of dielectric modulated (DM) hetero stack (HS) source based dual material double gate (DMDG) TFET biosensor through Sentaurus TCAD simulator. Here, four cavities are introduced near the source and drain regions for both the gate material through etching of Hf02 dielectric material and thus, a large number of biomolecules can be accommodate. Sensitivity (Sn) analysis is highlighted for both neutral and charged (positive/negative) biomolecules when cavity is entirely filled with biomolecules with dielectric constant (k) equivalent to various proteins. The obtained sensitivity is in the order of 10
⁴
implies the viability of the proposed sensor. We have reported the subthreshold swing (SS), transfer characteristics, and I
ON
/I
OFF
ratio of the biosensor for various proteins. Furthermore, steric hindrance gives better understanding in terms of non-ideal state of this sensor and decreasing profile has highest sensitivity at different fill factor (FF).