A 201- and 283-GHz Dual-Band Amplifier in 65-Nm CMOS Adopting Dual-Frequency $G_{\max }$-Core With Dual-Band Matching

This work reports a concurrent dual-band amplifier with an extensive spacing between the two bands by adopting a proposed dual-frequency maximum achievable gain (
$G_{\max }$
) core with dual-band matching. The proposed dual-frequency
$G_{\max }$
-core can expand the difference between the two target frequencies by focusing on satisfying dominant gain-boosting condition and adopting a linear, lossy, and reciprocal-based design approach. Implemented in a 65-nm complementary metal-oxide-semiconductor (CMOS) process, a five-stage dual-band amplifier shows a peak power gain of 23.6 and 13.7 dB, 3 dB bandwidth of 5 and 17 GHz, saturated output power (
$P_{\text{sat}}$
) of
$-$
1.2 and
$-$
2.2 dBm, and peak power-added efficiency of 2.1 and 1.5 % at 201 and 283 GHz, respectively, while consuming a dc power of 34.5 mW. The proposed amplifier is the first demonstration of the concurrent dual-band amplifier operating at G- (140–220 GHz) and H- (220–325 GHz) bands.