An X-interleaved Silicon Modulator for High-speed Application

Compared to the 2D doping design of the modulator, the 3D design has significant advantages in modulation efficiency and loss. However, as far as we know, complex doping in three dimensions has hardly been studied. This work proposes a modulator based on two inversely oblique junctions using the Monte-Carlo simulation. The results show that the modulation efficiency of the design is 1.09 V•cm, while the loss is 14.3 dB/cm and the bandwidth reaches over 35 GHz. This work demonstrates the benefits of 3D modulator design as the direction of light propagation is utilized to transport carriers, and provides a modulator solution for high-speed datacom.