Investigation of MoS₂/Perovskite/WSe₂ on Si Tandem Structure of Solar Cell

Owing to high efficiency in terms of power (PCE), perovskite material based solar cells (PSCs) are receiving the most attention from the researchers. In this work, we will suggest a novel transport layer combination that significantly improves device performance. The capability of our device will be demonstrated using the SCAPS-ID simulator. In order to design a tandem solar cell, this novel Perovskite layer is ultimately be used to design the top cell and bottom one is proposed with crystalline silicon. We have investigated that using MoS
2
(ETL) and WSe2 (HTL) as charge transport layer incorporated with absorber layer, MAPbI3, accomplish our goals after simulating every available parameter carefully. We have achieved upto 25.03% power conversion efficiency, fill factor (FF) of 88.26%, short circuit current density ($\mathrm{J}_{\mathrm{s}\mathrm{c}}$) of 27.62 mA/cm
²
, and open-circuit voltage ($\mathrm{V}_{\mathrm{o}\mathrm{c}}$) of 1.03V using this combination and their thickness modification. Considering defects in different layers the results are reduced to 22.63%, 85.34%, 26.S9mA/cm
²
and 0.99V respectively. At last, we have proposed a tandem solar cell consisting a crystalline silicon incorporated bottom cell to improve quantum efficiency (QE) and utilize more spectrum. With 0.76V$\mathrm{V}_{\mathrm{o}\mathrm{c}}$, 38.63mA/cm
²
$\mathrm{J}_{\mathrm{s}\mathrm{c}}$, and approximately 85.26% FF, the bottom Si cell has a PCE of 24.97%. The overall PCE of the tandem cell as a whole is 41.5 percent with $\mathrm{V}_{\mathrm{o}\mathrm{c}}$ of 1.74V, 87.12% FF, and 27.14SmA/cm
²
of $\mathrm{J}_{\mathrm{s}\mathrm{c}}$.