Impact of Dopants Incomplete Ionization on Resistivity Profiles in Triple-Doped Multicrystalline Silicon

This paper investigate the impact of incomplete ionization on the modelled resistivity profiles in p-type multicrystalline silicon doped with boron, phosphorus and gallium. The boron dopant density range was (2 – 6) E16 at/cm3.Theoretical foundations and methodology for calculating are briefly described. Plots of ionized impurity fractions and resistivity changes along the ingot height are presented. The evolution of the ionized boron and gallium atoms fraction as a function of the compensation level studied. The effect of incomplete ionization on the concentration of free charge carriers and, consequently, the resistivity value is more noticeable in compensated silicon. All model calculations presented in the article were done in MATLAB program.