Enhancement of Double Gate Tunnel Field Effect Transistor Structures with Different Variable Parameters

TFET is enhanced with the modified structure by the double gate used above the channel transistor with silicon and germanium forming hetero junction and used dielectric materials are two oxide materials which are silicon dioxide and hafnium dioxide as hetero-dielectric materails gate stack is being proposed. The electrical behavior of the device which includes transconductance, electric field, surface potential and drain current are presented using Silvaco TCAD ATLAS a potent 2D numerical simulator. Different types of TFET Architectures are discussed in detail. These structures analyzed by the simulation tool. The properties of different structed is compared and the performance of the TFET is enhanced by the reducing the ambipolar current and a better ION current, leakage current need to be reduced. Similarly subthreshold Swing (SS) and threshold voltage need to be lowered. TFET is mainly used for low power applications with these parameters.