Distribution of Process Induced Traps in Ozone Annealed Indium-Gallium-Zinc-Oxide Film Determined From Noise Characterization

Space-energy distribution of process induced traps was extracted from random telegraph noise (RTN) characterization on ozone (
$\text{O}_{{3}}{)}$
annealed Indium-Gallium-Zinc-Oxide (IGZO) metal-oxide-metal (MOM) capacitors. It was found that,
$\text{O}_{{3}}$
anneal increases both deeper and shallower traps in IGZO all the way to conduction band edge (CB) compared to the as-deposited film, and results in higher aggregate trap density as found from low frequency noise measurement. Extracted trap distribution was benchmarked with that in as-deposited and thermal annealed films, and was found convenient to interpret low field current degradation in IGZO due to
$\text{O}_{{3}}$
anneal.