Influence of the repetition frequency of powerful pulse electromagnetic interferences on reversible and irreversible failures at semiconductor devices

Within the thermal model, explained a dependence of the threshold energy of reversible and irreversible failures in ultrahigh-frequency devices, microcircuits and microprocessors impacted by the powerful electromagnetic pulses on their repetition frequency and the size of a semiconductor crystal. It is shown that failures of all devices’ types occur due to the development of electrothermal instabilities having common characteristic features. The calculation results well match the experimental data.