Defect Passivation and Reliability Enhancement by Low-Temperature-High-Pressure Hydrogenation in LDMOS With 0.13-μm Bipolar-CMOS-DMOS Technology

In this study, the new method featuring low-temperature and high-pressure hydrogenation (LTHP-H) which is applied to 0.13-
$\mu \text{m}$
bipolar-CMOS-DMOS technology is compared with the conventional 400
$^{\circ }\text{C} \text{H}_{{2}}$
annealing, and the technology without H2 treatment is used as a control group. It is found that the LDMOS processed by the LTHP-H has such following improvements as 11% increase of the on-state performance, which is 3% higher than that of H2 annealing, 61% increase of the interface quality and about 5 to 10 % improvement of the hot carrier degradation (HCD). The method not only lowers the process temperature, but also helps H2 enter the supercritical fluid state to form a large number of free radicals. Therefore, the interface quality is well passivated and Si-H bonds with stable strength are formed, which inhibits the generation of HCD accordingly. With the results of this research, this technology can improve the performance and reliability of LDMOS.