All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor With Amorphous Indium–Gallium–Zinc Oxide Channel

Double-gate ferroelectric thin-film transistor (DG-FeTFT) with an amorphous indium–gallium–zinc oxide (
$\alpha $
-IGZO) channel is demonstrated. DG-FeTFT is composed of all-sputter-deposited thin films and the bottom FeTFT (FeTFT
$_{\text {bottom}}{)}$
and top conventional TFT (TFT
$_{\text {top}}{)}$
are combined into a single device that shares the
$\alpha $
-IGZO channel and source/drain. Through the separation of read (by TFT
$_{\text {top}}{)}$
and program/erase (by FeTFT
$_{\text {bottom}}{)}$
operations, it is confirmed that wide memory window (MW) of
$\sim $
5V is obtained with an MW amplification and read disturbance can be significantly improved. Furthermore, it is verified that faster program/erase speeds are achievable by modulating the gate voltage of TFTtop, leading to the improved endurance characteristics.