High Critical Current Densities by Controlling Layer Thickness for FF-MOD GdBa2Cu3Oy Introduced BaMO3 (M = Ce, Zr) Artificial Pins

We have fabricated Ce or Zr doped GdBa
₂
Cu
₃
O
_y
(Gd123) thin films on LaAlO
₃
single crystal substrates by FF-MOD (Fluorine-Free Metal Organic Decomposition) method and studied the magnetic field dependence of critical current densities with changes in the number of layers and the layer thickness of the films. We have found that
J
_C
and
F
_P
increased remarkably with increasing number of layers and the peak of
F
_P
shifted to the higher magnetic field. This is considered to be the effect of refinement of BaMO
₃
pins due to the suppression of crystal growth by multilayering. Zr 3.0 mol% doped 5 layers film achieved the highest
J
_C
of 3.69 MA/cm
²
at 0 T and 0.39 MA/cm
²
at 1.0 T under 77.3 K.