Performance improvement in AlGaN-based ultraviolet light diodes with superlattice hole reservoir layer

In order to effectively improve the hole injection efficiency and reduce the electron leakage increase the output power, and optimize its performance of the deep ultraviolet laser diode, a new hole reservoir layer (HRL) is added to the original structure of the laser and designed as a superlattice HRL. Through the observation of its energy band diagram and P-I and V-I characteristic curves. The results show that the superlattice HRL structure can effectively increase the hole injection and prevent the electron leakage in the active region, and realize the superior optoelectronic performance of the laser.