Compact Modeling of Impact Ionization in High-Voltage Devices

In this article, we discuss a novel compact model to capture the double-hump characteristic in the substrate current versus gate voltage plot of a high-voltage device. An analytical expression for the electric field is derived by solving Poisson’s equation at the drift–drain junction of the device, which is then incorporated in the final substrate current equation. The model is implemented in the Berkeley Short-channel IGFET Model-Bulk (BSIM-BULK) HV compact model and validated with numerical TCAD simulations and different experimental datasets.