Sub-10-nm Tunnel Field-Effect Transistor with Schottky Drain

An SD-TFET, which is a tunnel field effect transistor with Schottky drain, is proposed in this paper for sub-10-nm applications. On-off switching characteristics were examined by examining some of the critical device parameters, including the metal work-function in a Schottky drain. When designing SD- TFETs for low-power integrated circuits, a moderate Schottky drain work-function is preferred.