A Review on Graphene Transistors

The silicon complementary metal-oxide-semiconductor (CMOS) technology is the leading electronic industry. Today, silicon CMOS technology has hit its basic limits (physical and geometrical), which for future technical nodes is the key roadblock. The problem with silicon is its poor stability below 10 nm, since it decomposes, and migrates unpredictably. Graphene field-effect transistors (FETs) are promising devices for the next generation of electronic and photonic devices. Graphene FETs have many advantages over traditional silicon-based transistors, including higher electron mobility, higher on/off ratio, and the potential for high-speed operation. In addition, graphene FETs have been demonstrated to have excellent device stability, low-power operation, and low-cost fabrication. This review discusses the current state of graphene FET technology, including device physics, fabrication techniques, and device performance. The potential of graphene FETs in applications such as high-speed computing, and energy-efficient electronics is also discussed.